![Energy-efficient transistors: suppressing the subthreshold swing below the physical limit - Materials Horizons (RSC Publishing) DOI:10.1039/D0MH02029J Energy-efficient transistors: suppressing the subthreshold swing below the physical limit - Materials Horizons (RSC Publishing) DOI:10.1039/D0MH02029J](https://pubs.rsc.org/image/article/2021/MH/d0mh02029j/d0mh02029j-f2_hi-res.gif)
Energy-efficient transistors: suppressing the subthreshold swing below the physical limit - Materials Horizons (RSC Publishing) DOI:10.1039/D0MH02029J
![Electronics | Free Full-Text | Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor Electronics | Free Full-Text | Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor](https://www.mdpi.com/electronics/electronics-08-01415/article_deploy/html/images/electronics-08-01415-g002.png)
Electronics | Free Full-Text | Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor
![An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1007%2Fs00542-018-4227-1/MediaObjects/542_2018_4227_Fig3_HTML.png)
An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink
![Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs](https://www.degruyter.com/document/doi/10.1515/psr-2016-0008/asset/graphic/j_psr-2016-0008_fig_016.jpg)
Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs
![Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor | Scientific Reports Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor | Scientific Reports](https://media.springernature.com/lw685/springer-static/image/art%3A10.1038%2Fsrep24734/MediaObjects/41598_2016_Article_BFsrep24734_Fig3_HTML.jpg)
Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor | Scientific Reports
![Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors - Wang - 2020 - Advanced Materials - Wiley Online Library Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors - Wang - 2020 - Advanced Materials - Wiley Online Library](https://onlinelibrary.wiley.com/cms/asset/358e1c44-d132-42e0-b786-d9dea6cd0ca5/adma202005353-fig-0002-m.jpg)
Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors - Wang - 2020 - Advanced Materials - Wiley Online Library
![Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor | Scientific Reports Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor | Scientific Reports](https://media.springernature.com/lw685/springer-static/image/art%3A10.1038%2Fsrep24734/MediaObjects/41598_2016_Article_BFsrep24734_Fig6_HTML.jpg)
Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor | Scientific Reports
![Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon-germanium substrates Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon-germanium substrates](http://www.jos.ac.cn/fileBDTXB/journal/article/bdtxb/2014/10/js-35-10-104002-1-6.jpg)
Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon-germanium substrates
![Subthreshold swing, Additional concepts video lecture by Prof Prof. Sanjiv Sambandan of IISc Bangalore Subthreshold swing, Additional concepts video lecture by Prof Prof. Sanjiv Sambandan of IISc Bangalore](https://i.ytimg.com/vi/FuA54en1SOw/hqdefault.jpg)
Subthreshold swing, Additional concepts video lecture by Prof Prof. Sanjiv Sambandan of IISc Bangalore
![Figure 12 | A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges | SpringerLink Figure 12 | A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges | SpringerLink](https://media.springernature.com/full/springer-static/image/art%3A10.1007%2Fs10825-019-01377-5/MediaObjects/10825_2019_1377_Fig12_HTML.png)
Figure 12 | A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges | SpringerLink
![Partially Depleted Silicon-on-Ferroelectric Insulator Field Effect Transistor- Parametrization & Design Optimization for Minimum Subthreshold Swing - ScienceDirect Partially Depleted Silicon-on-Ferroelectric Insulator Field Effect Transistor- Parametrization & Design Optimization for Minimum Subthreshold Swing - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0026269215001950-gr1.jpg)
Partially Depleted Silicon-on-Ferroelectric Insulator Field Effect Transistor- Parametrization & Design Optimization for Minimum Subthreshold Swing - ScienceDirect
![Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor<xref ref-type="fn" rid="cpb141583fn1">*</xref> Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor<xref ref-type="fn" rid="cpb141583fn1">*</xref>](http://cpb.iphy.ac.cn/article/2015/cpb_24_3_037303/cpb141583f5_online.png)
Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor<xref ref-type="fn" rid="cpb141583fn1">*</xref>
![Figure 7 | An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink Figure 7 | An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink](https://media.springernature.com/full/springer-static/image/art%3A10.1007%2Fs00542-018-4227-1/MediaObjects/542_2018_4227_Fig7_HTML.png)
Figure 7 | An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink
![Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p+–i–n+ Nanowires by Dual-Top-Gate Voltage Modulation | Nano Letters Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p+–i–n+ Nanowires by Dual-Top-Gate Voltage Modulation | Nano Letters](https://pubs.acs.org/cms/10.1021/acs.nanolett.5b00606/asset/images/medium/nl-2015-006065_0010.gif)